Observation of electron transport in polyethylene terephthalate and the radiation hardening of dielectricsKURTZ, S. R.Applied physics letters. 1985, Vol 46, Num 11, pp 1105-1107, issn 0003-6951Article

Anomalous electroreflectance spectrum of spontaneously ordered Ga_0.5In_0.5PKURTZ, S. R.Journal of applied physics. 1993, Vol 74, Num 6, pp 4130-4135, issn 0021-8979Article

Photovoltaic Degradation Rates—an Analytical ReviewJORDAN, D. C; KURTZ, S. R.Progress in photovoltaics (Print). 2013, Vol 21, Num 1, pp 12-29, issn 1062-7995, 18 p.Article

The growth of infrared antimonide-based semiconductor lasers by metal-organic chemical vapor depositionBIEFELD, R. M; ALLERMAN, A. A; KURTZ, S. R et al.Journal of materials science. Materials in electronics. 2002, Vol 13, Num 11, pp 649-657, issn 0957-4522, 9 p.Article

Photocurrent of 1 eV GaInNAs lattice-matched to GaAsGEISZ, J. F; FRIEDMAN, D. J; OLSON, J. M et al.Journal of crystal growth. 1998, Vol 195, Num 1-4, pp 401-408, issn 0022-0248Conference Paper

Microstructures of InAs_1-xSb_x (x=0.07-0.14) alloys and strained-layer superlatticesFOLLSTAEDT, D. M; BIEFELD, R. M; KURTZ, S. R et al.Journal of electronic materials. 1995, Vol 24, Num 7, pp 819-825, issn 0361-5235Article

Optical characterization of Si_1-xC_x/Si (0≤x≤0.014) semiconductor alloysLEE, H; KURTZ, S. R; FLORO, J. A et al.Japanese journal of applied physics. 1995, Vol 34, Num 10B, pp L1340-L1343, issn 0021-4922, 2Article

Carbon doping and etching of MOCVD-grown GaAs, InP, and related ternaries using CCl₄KIBBLER, A. E; KURTZ, S. R; OLSON, J. M et al.Journal of crystal growth. 1991, Vol 109, Num 1-4, pp 258-263, issn 0022-0248Conference Paper

The difference between standard and average efficiencies of multijunction compared with single-junction concentratorKURTZ, S. R; OLSON, J. M; FAINE, P et al.Solar cells. 1991, Vol 30, Num 1-4, pp 501-513, issn 0379-6787Conference Paper

MOCVD-grown InAsSb strained-layer superlattice infrared detectors with photoresponses ≥ 10μmKURTZ, S. R; BIELEFELD, R. M; ZIPPERIAN, T. E et al.Semiconductor science and technology. 1990, Vol 5, Num 3S, pp S24-S26, issn 0268-1242Conference Paper

Long-wavelength InAsSb strained-layer superlattice photovoltaic infrared detectorsKURTZ, S. R; DAWSON, L. R; BIEFELD, R. M et al.IEEE electron device letters. 1989, Vol 10, Num 4, pp 150-152, issn 0741-3106Article

High photoconductive gain in lateral InAsSb strained-layer superlattice infrared detectorsKURTZ, S. R; BIEFELD, R. M; DAWSON, L. R et al.Applied physics letters. 1988, Vol 53, Num 20, pp 1961-1963, issn 0003-6951Article

Electroreflectance and photoreflectance of GaInPKURTZ, S. R; OLSON, J. M; KIBBLER, A et al.Solar cells. 1988, Vol 24, Num 3-4, pp 307-312, issn 0379-6787Conference Paper

Clinical utility of oncofetal proteins and hormones as tumor markersGARRETT, P. E; KURTZ, S. R.The Medical clinics of North America. 1986, Vol 70, Num 6, pp 1295-1306, issn 0025-7125Article

MOCVD of Ga_0.52In_0.48P using tertiarybutylphosphineKURTZ, S. R; OLSON, J. M; KIBBLER, A et al.Journal of electronic materials. 1989, Vol 18, Num 1, pp 15-18, issn 0361-5235, 4 p.Article

Rapid characterization of photovoltaic materials using photoelectrochemical techniquesKURTZ, S. R; OLSON, J. M.Photovoltaic specialists conference. 19. 1987, pp 823-826Conference Paper

Photocarrier transport and trapping processes in doped polyethylene terephthalate filmsKURTZ, S. R; ARNOLD, C. JR.Journal of applied physics. 1985, Vol 57, Num 7, pp 2532-2537, issn 0021-8979Article

Chemical vapor deposition of doped TiO₂ thin films = Dépôt chimique en phase vapeur de films minces de TiO₂ dopésKURTZ, S. R; GORDON, R. G.Thin solid films. 1987, Vol 147, Num 2, pp 167-176, issn 0040-6090Article

Transparent conducting electrodes on siliconKURTZ, S. R; GORDON, R. G.Solar energy materials. 1987, Vol 15, Num 4, pp 229-236, issn 0165-1633Article

Properties of the metal-polymer interface observed with space-charge mapping techniquesKURTZ, S. R; ANDERSON, R. A.Journal of applied physics. 1986, Vol 60, Num 2, pp 681-687, issn 0021-8979Article

Direct observation of field-injected space charge in a metal-insulator-metal structureANDERSON, R. A; KURTZ, S. R.Journal of applied physics. 1984, Vol 56, Num 10, pp 2856-2863, issn 0021-8979Article

Radiation-induced space charge in polymer film capacitorKURTZ, S. R; ANDERSON, R. A.Applied physics letters. 1986, Vol 49, Num 21, pp 1484-1486, issn 0003-6951Article

Pulse testing of GaN/AlGaN HEMTsBACA, A. G; KIM, Y. M; MARSH, P. F et al.Proceedings - Electrochemical Society. 2004, pp 435-440, issn 0161-6374, isbn 1-56677-419-5, 6 p.Conference Paper

Common n- and p-contact for serial wiring of quaternary antimonide monolithic interconnected module thermophotovoltaic devicesPEAKE, G. M; CEDERBERG, J. G; HAFICH, M. J et al.Journal of the Electrochemical Society. 2002, Vol 149, Num 7, pp G416-G419, issn 0013-4651Article

Optical properties of InGaAsN: A new 1eV bandgap material systemJONES, E. D; MODINE, N. A; ALLERMAN, A. A et al.SPIE proceedings series. 1999, pp 52-63, isbn 0-8194-3091-9Conference Paper